HGB047N12S Datasheet. Specs and Replacement

Type Designator: HGB047N12S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 167 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 626 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: TO-263

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HGB047N12S datasheet

 ..1. Size:906K  cn hunteck
 hgb047n12s hgp047n12s.pdf pdf_icon

HGB047N12S

, P-1 HGB047N12S HGP047N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 3.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 167 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchi... See More ⇒

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGB047N12S

, P-1 HGB043N15S HGK043N15S HGP043N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.3 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 206 A ID (Sillicon Limited) Lead Free Application Synchronous... See More ⇒

 9.2. Size:822K  cn hunteck
 hgb040n06sl hgp040n06sl.pdf pdf_icon

HGB047N12S

HGB040N06SL HGP040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 2.9 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.1 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.4 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 140 A ID (Sillicon Limited) ... See More ⇒

 9.3. Size:919K  cn hunteck
 hgb046ne6a hgp046ne6a.pdf pdf_icon

HGB047N12S

, P-1 HGB046NE6A HGP046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 108 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

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Detailed specifications: HGP043N15S, HGB045N15S, HGK045N15S, HGP045N15S, HGB046NE6A, HGP046NE6A, HGB046NE6AL, HGP046NE6AL, NCEP15T14, HGP047N12S, HGB049N10S, HGP049N10S, HGB050N10A, HGP050N10A, HGB050N14S, HGP050N14S, HGB053N06S

Keywords - HGB047N12S MOSFET specs

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