HGP050N10A Spec and Replacement
Type Designator: HGP050N10A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 179
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 125
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 571
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package:
TO-220
HGP050N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP050N10A Specs
..1. Size:975K cn hunteck
hgb050n10a hgp050n10a.pdf 
, P-1 HGB050N10A HGP050N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 4.5 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and Hig... See More ⇒
0.1. Size:985K cn hunteck
hgp050n10al.pdf
HGP050N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 4.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and... See More ⇒
6.1. Size:851K cn hunteck
hgb050n14s hgp050n14s.pdf
, HGB050N14S HGP050N14S P-1 135V N-Ch Power MOSFET Feature 135 V VDS High Speed Power Smooth Switching 4.5 RDS(on),TYP m Enhanced Body diode dv/dt capability 175 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching a... See More ⇒
9.1. Size:919K cn hunteck
hgb059n08a hgp059n08a.pdf
, P-1 HGB059N08A HGP059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 97 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒
9.2. Size:849K cn hunteck
hgb059n12s hgp059n12s.pdf
, HGB059N12S HGP059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 4.7 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectif... See More ⇒
9.3. Size:1121K cn hunteck
hgb057n15s hgk057n15s hgp057n15s.pdf
, HGB057N15S HGK057N15S P-1 HGP057N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 5.3 RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-247 5.4 RDS(on),TYP mW Enhanced Avalanche Ruggedness TO-220 5.5 RDS(on),TYP mW 100% UIS Tested, 100% Rg Tested 161 A Lead Free ID (Sillicon Limited) Application Synchr... See More ⇒
9.4. Size:810K cn hunteck
hgb058n08sl hgp058n08sl.pdf
HGB058N08SL, HGP058N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching,Logic Level 4.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 4.3 RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested 5.9 RDS(on),typ VGS=4.5V m Lead Free 130 A ID (Sillicon Limit... See More ⇒
9.5. Size:851K cn hunteck
hgb059n12sl hgp059n12sl.pdf
, HGB059N12SL HGP059N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching, Logic Level TO-263 4.7 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 5.3 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Syn... See More ⇒
9.6. Size:978K cn hunteck
hgb055n12s hgp055n12s.pdf
, P-1 HGB055N12S HGP055N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.8 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 146 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchi... See More ⇒
9.7. Size:820K cn hunteck
hgb053n06sl hgp053n06sl.pdf
HGB053N06SL , HGP053N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 3.9 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.3 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 4.1 RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested 5.6 RDS(on),typ VGS=4.5V m Lead Free, Halogen Free 105 A ID... See More ⇒
9.8. Size:926K cn hunteck
hgb053n06s hgp053n06s.pdf
, P-1 HGB053N06S HGP053N06S 60V N-Ch Power MOSFET 60 V VDS Feature TO-263 4.3 RDS(on),typ mW Optimized for high speed switching TO-220 4.6 RDS(on),typ mW Enhanced Body diode dv/dt capability 112 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchrono... See More ⇒
Detailed specifications: HGP046NE6A
, HGB046NE6AL
, HGP046NE6AL
, HGB047N12S
, HGP047N12S
, HGB049N10S
, HGP049N10S
, HGB050N10A
, IRFP250
, HGB050N14S
, HGP050N14S
, HGB053N06S
, HGP053N06S
, HGB053N06SL
, HGP053N06SL
, HGB055N12S
, HGP055N12S
.
Keywords - HGP050N10A MOSFET specs
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HGP050N10A equivalent finder
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