HGP050N10A - описание и поиск аналогов

, P-1 HGB050N10A HGP050N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 4.5 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and Hig

HGP050N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 4.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and

, HGB050N14S HGP050N14S P-1 135V N-Ch Power MOSFET Feature 135 V VDS High Speed Power Smooth Switching 4.5 RDS(on),TYP m Enhanced Body diode dv/dt capability 175 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching a

, P-1 HGB059N08A HGP059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 97 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain

, HGB059N12S HGP059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 4.7 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectif

, HGB057N15S HGK057N15S P-1 HGP057N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 5.3 RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-247 5.4 RDS(on),TYP mW Enhanced Avalanche Ruggedness TO-220 5.5 RDS(on),TYP mW 100% UIS Tested, 100% Rg Tested 161 A Lead Free ID (Sillicon Limited) Application Synchr

HGB058N08SL, HGP058N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching,Logic Level 4.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 4.3 RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested 5.9 RDS(on),typ VGS=4.5V m Lead Free 130 A ID (Sillicon Limit

, HGB059N12SL HGP059N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching, Logic Level TO-263 4.7 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 5.3 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Syn

, P-1 HGB055N12S HGP055N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.8 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 146 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchi

HGB053N06SL , HGP053N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 3.9 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.3 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 4.1 RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested 5.6 RDS(on),typ VGS=4.5V m Lead Free, Halogen Free 105 A ID

, P-1 HGB053N06S HGP053N06S 60V N-Ch Power MOSFET 60 V VDS Feature TO-263 4.3 RDS(on),typ mW Optimized for high speed switching TO-220 4.6 RDS(on),typ mW Enhanced Body diode dv/dt capability 112 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchrono