HGP070N12S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP070N12S
Marking Code: GP070N12S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 133 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 38 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 438 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0067 Ohm
Package: TO-220
HGP070N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP070N12S Datasheet (PDF)
hgb070n12s hgp070n12s.pdf
, P-1HGB070N12SHGP070N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 6RDS(on),typ mW Enhanced Avalanche Ruggedness133 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain H
hgp070n12sl.pdf
HGP070N12SL P-1120V N-Ch Power MOSFETFeature 120 VVDS High Speed Power Switching, Logic Level 5.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 125 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS
hgb070n15s hgk070n15s hgp070n15s.pdf
HGB070N15S , HGK070N15S P-1HGP070N15S150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching TO-263 5.9RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 6.1RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 6.2RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 140 A Lead Free IDApplication Synchronous Rectification in SMPS
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