All MOSFET. HGB080N10AL Datasheet

 

HGB080N10AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB080N10AL
   Marking Code: GB080N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 348 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0102 Ohm
   Package: TO-263

 HGB080N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB080N10AL Datasheet (PDF)

 ..1. Size:924K  cn hunteck
 hgb080n10al hgp080n10al.pdf

HGB080N10AL HGB080N10AL

HGB080N10AL , HGP080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.1RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested9.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free85 AID (Sillico

 4.1. Size:915K  cn hunteck
 hgb080n10a hgp080n10a.pdf

HGB080N10AL HGB080N10AL

, P-1HGB080N10AHGP080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 7.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 7.6RDS(on),typ mW Enhanced Avalanche Ruggedness84.3 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 7.1. Size:814K  cn hunteck
 hgb080n08sl hgp080n08sl.pdf

HGB080N10AL HGB080N10AL

HGB080N08SL , HGP080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level6.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V8.4RDS(on),typ m Enhanced Avalanche Ruggedness6.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V8.7RDS(on),typ m Lead Free, Halogen

 9.1. Size:1212K  cn hunteck
 hgb088n15s hgp088n15s.pdf

HGB080N10AL HGB080N10AL

HGB088N15S HGP088N15S, P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 113 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a

 9.2. Size:852K  cn hunteck
 hgb082n10m hgp082n10m.pdf

HGB080N10AL HGB080N10AL

,HGB082N10M HGP082N10M P-1100V N-Ch Power MOSFET100 VFeature VDSTO-263 6.1RDS(on),typ m Optimized for high speed smooth switchingTO-220 6.4RDS(on),typ m Enhanced Body diode dv/dt capability100 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switchin

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History: IRF7483M

 

 
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