HGP090N06SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP090N06SL
Marking Code: GP090N06SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 63 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 415 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
Package: TO-220
HGP090N06SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP090N06SL Datasheet (PDF)
hgb090n06sl hgp090n06sl.pdf
HGB090N06SL HGP090N06SL, P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V 9.7RDS(on),typ m Enhanced Avalanche Ruggedness7.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V 10.0RDS(on),typ m Lead Free, Halogen
hgp098n10s.pdf
HGP098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.0RDS(on),typ mW Enhanced Avalanche Ruggedness70 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed CircuitTO-
hgb095ne4sl hgp095ne4sl.pdf
HGB095NE4SL , HGP095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.6RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V10.7RDS(on),typ m Enhanced Avalanche Ruggedness7.9RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V11RDS(on),typ m Lead Free, Halogen
hgb098n10a hgp098n10a.pdf
HGB098N10A , P-1HGP098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness70.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in
hgb098n10al hgp098n10al.pdf
, P-1HGB098N10ALHGP098N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness8.4RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested11.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free68 AID (Sil
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD