All MOSFET. HGP090N06SL Datasheet

 

HGP090N06SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGP090N06SL
   Marking Code: GP090N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 63 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: TO-220

 HGP090N06SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP090N06SL Datasheet (PDF)

 ..1. Size:800K  cn hunteck
 hgb090n06sl hgp090n06sl.pdf

HGP090N06SL HGP090N06SL

HGB090N06SL HGP090N06SL, P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V 9.7RDS(on),typ m Enhanced Avalanche Ruggedness7.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V 10.0RDS(on),typ m Lead Free, Halogen

 9.1. Size:964K  cn hunteck
 hgp098n10s.pdf

HGP090N06SL HGP090N06SL

HGP098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.0RDS(on),typ mW Enhanced Avalanche Ruggedness70 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed CircuitTO-

 9.2. Size:816K  cn hunteck
 hgb095ne4sl hgp095ne4sl.pdf

HGP090N06SL HGP090N06SL

HGB095NE4SL , HGP095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.6RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V10.7RDS(on),typ m Enhanced Avalanche Ruggedness7.9RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V11RDS(on),typ m Lead Free, Halogen

 9.3. Size:926K  cn hunteck
 hgb098n10a hgp098n10a.pdf

HGP090N06SL HGP090N06SL

HGB098N10A , P-1HGP098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness70.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

 9.4. Size:924K  cn hunteck
 hgb098n10al hgp098n10al.pdf

HGP090N06SL HGP090N06SL

, P-1HGB098N10ALHGP098N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness8.4RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested11.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free68 AID (Sil

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