HGP090N06SL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HGP090N06SL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 79 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 63 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 415 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0087 Ohm
Тип корпуса: TO-220
Аналог (замена) для HGP090N06SL
HGP090N06SL Datasheet (PDF)
hgb090n06sl hgp090n06sl.pdf

HGB090N06SL HGP090N06SL, P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V 9.7RDS(on),typ m Enhanced Avalanche Ruggedness7.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V 10.0RDS(on),typ m Lead Free, Halogen
hgp098n10s.pdf

HGP098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.0RDS(on),typ mW Enhanced Avalanche Ruggedness70 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed CircuitTO-
hgb095ne4sl hgp095ne4sl.pdf

HGB095NE4SL , HGP095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.6RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V10.7RDS(on),typ m Enhanced Avalanche Ruggedness7.9RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V11RDS(on),typ m Lead Free, Halogen
hgb098n10a hgp098n10a.pdf

HGB098N10A , P-1HGP098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness70.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in
Другие MOSFET... HGP080N10A , HGB080N10AL , HGP080N10AL , HGB082N10M , HGP082N10M , HGB088N15S , HGP088N15S , HGB090N06SL , IRFP064N , HGB095NE4SL , HGP095NE4SL , HGB098N10A , HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S , HGP100N12S .
History: PE521BA | FDS6680S | ZXM64N035L3 | H7N1005LD | CMPF4391 | BSC035N04LSG | STN4260
History: PE521BA | FDS6680S | ZXM64N035L3 | H7N1005LD | CMPF4391 | BSC035N04LSG | STN4260



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