HGB095NE4SL Datasheet. Specs and Replacement

Type Designator: HGB095NE4SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 309 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO-263

  📄📄 Copy 

HGB095NE4SL substitution

- MOSFET ⓘ Cross-Reference Search

 

HGB095NE4SL datasheet

 ..1. Size:816K  cn hunteck
hgb095ne4sl hgp095ne4sl.pdf pdf_icon

HGB095NE4SL

HGB095NE4SL , HGP095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.6 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 10.7 RDS(on),typ m Enhanced Avalanche Ruggedness 7.9 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 11 RDS(on),typ m Lead Free, Halogen... See More ⇒

 9.1. Size:926K  cn hunteck
hgb098n10a hgp098n10a.pdf pdf_icon

HGB095NE4SL

HGB098N10A , P-1 HGP098N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness 70.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in ... See More ⇒

 9.2. Size:800K  cn hunteck
hgb090n06sl hgp090n06sl.pdf pdf_icon

HGB095NE4SL

HGB090N06SL HGP090N06SL , P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 7.0 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 9.7 RDS(on),typ m Enhanced Avalanche Ruggedness 7.3 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 10.0 RDS(on),typ m Lead Free, Halogen... See More ⇒

 9.3. Size:924K  cn hunteck
hgb098n10al hgp098n10al.pdf pdf_icon

HGB095NE4SL

, P-1 HGB098N10AL HGP098N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 8.4 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 11.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 68 A ID (Sil... See More ⇒

Detailed specifications: HGB080N10AL, HGP080N10AL, HGB082N10M, HGP082N10M, HGB088N15S, HGP088N15S, HGB090N06SL, HGP090N06SL, IRF730, HGP095NE4SL, HGB098N10A, HGP098N10A, HGB098N10AL, HGP098N10AL, HGB100N12S, HGP100N12S, HGB105N15M

Keywords - HGB095NE4SL MOSFET specs

 HGB095NE4SL cross reference

 HGB095NE4SL equivalent finder

 HGB095NE4SL pdf lookup

 HGB095NE4SL substitution

 HGB095NE4SL replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.