All MOSFET. HGP095NE4SL Datasheet

 

HGP095NE4SL Datasheet and Replacement


   Type Designator: HGP095NE4SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-220
 

 HGP095NE4SL substitution

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HGP095NE4SL Datasheet (PDF)

 ..1. Size:816K  cn hunteck
 hgb095ne4sl hgp095ne4sl.pdf pdf_icon

HGP095NE4SL

HGB095NE4SL , HGP095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.6RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V10.7RDS(on),typ m Enhanced Avalanche Ruggedness7.9RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V11RDS(on),typ m Lead Free, Halogen

 9.1. Size:964K  cn hunteck
 hgp098n10s.pdf pdf_icon

HGP095NE4SL

HGP098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.0RDS(on),typ mW Enhanced Avalanche Ruggedness70 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed CircuitTO-

 9.2. Size:926K  cn hunteck
 hgb098n10a hgp098n10a.pdf pdf_icon

HGP095NE4SL

HGB098N10A , P-1HGP098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness70.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

 9.3. Size:800K  cn hunteck
 hgb090n06sl hgp090n06sl.pdf pdf_icon

HGP095NE4SL

HGB090N06SL HGP090N06SL, P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V 9.7RDS(on),typ m Enhanced Avalanche Ruggedness7.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V 10.0RDS(on),typ m Lead Free, Halogen

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Datasheet: HGP080N10AL , HGB082N10M , HGP082N10M , HGB088N15S , HGP088N15S , HGB090N06SL , HGP090N06SL , HGB095NE4SL , IRFZ44N , HGB098N10A , HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S , HGP100N12S , HGB105N15M , HGK105N15M .

History: 2SK2642-01MR | BLP04N10-B | RQA0008NXAQS | AM2394NE | AM4533C | S-LNTK2575LT1G | APT30M75BFLLG

Keywords - HGP095NE4SL MOSFET datasheet

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