HGP100N12S Datasheet. Specs and Replacement
Type Designator: HGP100N12S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 109 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 235 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
Package: TO-220
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HGP100N12S substitution
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HGP100N12S datasheet
hgb100n12s hgp100n12s.pdf
, HGB100N12S HGP100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-263 8.3 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 8.6 RDS(on),typ m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching ... See More ⇒
hgp100n12sl.pdf
HGP100N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchin... See More ⇒
hgb105n15s hgp105n15s.pdf
, HGB105N15S HGP105N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 104 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS ... See More ⇒
hgb105n15m hgk105n15m hgp105n15m.pdf
, P-1 HGB105N15M HGK105N15M HGP105N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 8.5 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 8.8 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 120 A ID (Sillicon Limited) Lead Free Application Synch... See More ⇒
Detailed specifications: HGP090N06SL, HGB095NE4SL, HGP095NE4SL, HGB098N10A, HGP098N10A, HGB098N10AL, HGP098N10AL, HGB100N12S, IRF540, HGB105N15M, HGK105N15M, HGP105N15M, HGB105N15S, HGP105N15S, HGB105N15SL, HGP105N15SL, HGB110N10SL
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