All MOSFET. HGP100N12S Datasheet

 

HGP100N12S Datasheet and Replacement


   Type Designator: HGP100N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 109 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
   Package: TO-220
 

 HGP100N12S substitution

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HGP100N12S Datasheet (PDF)

 ..1. Size:813K  cn hunteck
 hgb100n12s hgp100n12s.pdf pdf_icon

HGP100N12S

,HGB100N12S HGP100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 8.3RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 8.6RDS(on),typ m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching

 0.1. Size:802K  cn hunteck
 hgp100n12sl.pdf pdf_icon

HGP100N12S

HGP100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchin

 9.1. Size:979K  cn hunteck
 hgb105n15s hgp105n15s.pdf pdf_icon

HGP100N12S

,HGB105N15S HGP105N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 9.3RDS(on),typ mW Enhanced Avalanche Ruggedness104 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

 9.2. Size:872K  cn hunteck
 hgb105n15m hgk105n15m hgp105n15m.pdf pdf_icon

HGP100N12S

, P-1HGB105N15M HGK105N15MHGP105N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 8.5RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 8.8RDS(on),typ m 100% UIS Tested, 100% Rg Tested120 AID (Sillicon Limited) Lead FreeApplication Synch

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Datasheet: HGP090N06SL , HGB095NE4SL , HGP095NE4SL , HGB098N10A , HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S , IRF540N , HGB105N15M , HGK105N15M , HGP105N15M , HGB105N15S , HGP105N15S , HGB105N15SL , HGP105N15SL , HGB110N10SL .

History: PA610NV | QM3014N3 | QM3001V | QM4014D | 2SK660 | GP1M007A090XX | CTLDM7120-M621H

Keywords - HGP100N12S MOSFET datasheet

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