All MOSFET. HGP105N15M Datasheet

 

HGP105N15M MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGP105N15M
   Marking Code: GP105N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 333 W
   Maximum Drain-Source Voltage |Vds|: 150 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 120 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 74 nC
   Rise Time (tr): 58 nS
   Drain-Source Capacitance (Cd): 350 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0104 Ohm
   Package: TO-220

 HGP105N15M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP105N15M Datasheet (PDF)

 ..1. Size:872K  cn hunteck
hgb105n15m hgk105n15m hgp105n15m.pdf

HGP105N15M
HGP105N15M

, P-1HGB105N15M HGK105N15MHGP105N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 8.5RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 8.8RDS(on),typ m 100% UIS Tested, 100% Rg Tested120 AID (Sillicon Limited) Lead FreeApplication Synch

 5.1. Size:979K  cn hunteck
hgb105n15s hgp105n15s.pdf

HGP105N15M
HGP105N15M

,HGB105N15S HGP105N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 9.3RDS(on),typ mW Enhanced Avalanche Ruggedness104 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

 5.2. Size:855K  cn hunteck
hgb105n15sl hgp105n15sl.pdf

HGP105N15M
HGP105N15M

HGB105N15SL HGP105N15SL, P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 8.7RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 9RDS(on),typ m Enhanced Avalanche Ruggedness122 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synch

 9.1. Size:802K  cn hunteck
hgp100n12sl.pdf

HGP105N15M
HGP105N15M

HGP100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchin

 9.2. Size:813K  cn hunteck
hgb100n12s hgp100n12s.pdf

HGP105N15M
HGP105N15M

,HGB100N12S HGP100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 8.3RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 8.6RDS(on),typ m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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