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HGB105N15S Spec and Replacement


   Type Designator: HGB105N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 273 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 104 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
   Package: TO-263

 HGB105N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB105N15S Specs

 ..1. Size:979K  cn hunteck
hgb105n15s hgp105n15s.pdf pdf_icon

HGB105N15S

, HGB105N15S HGP105N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 104 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS ... See More ⇒

 0.1. Size:855K  cn hunteck
hgb105n15sl hgp105n15sl.pdf pdf_icon

HGB105N15S

HGB105N15SL HGP105N15SL , P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching, Logic Level TO-263 8.7 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 9 RDS(on),typ m Enhanced Avalanche Ruggedness 122 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synch... See More ⇒

 5.1. Size:872K  cn hunteck
hgb105n15m hgk105n15m hgp105n15m.pdf pdf_icon

HGB105N15S

, P-1 HGB105N15M HGK105N15M HGP105N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 8.5 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 8.8 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 120 A ID (Sillicon Limited) Lead Free Application Synch... See More ⇒

 9.1. Size:813K  cn hunteck
hgb100n12s hgp100n12s.pdf pdf_icon

HGB105N15S

, HGB100N12S HGP100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-263 8.3 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 8.6 RDS(on),typ m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching ... See More ⇒

Detailed specifications: HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S , HGP100N12S , HGB105N15M , HGK105N15M , HGP105N15M , IRF640 , HGP105N15S , HGB105N15SL , HGP105N15SL , HGB110N10SL , HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S .

History: AP50WN270I | HGP105N15SL | HGB110N20S

Keywords - HGB105N15S MOSFET specs

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History: AP50WN270I | HGP105N15SL | HGB110N20S

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