HGB105N15S Datasheet. Specs and Replacement

Type Designator: HGB105N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 273 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 104 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm

Package: TO-263

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HGB105N15S datasheet

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 hgb105n15s hgp105n15s.pdf pdf_icon

HGB105N15S

, HGB105N15S HGP105N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 104 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS ... See More ⇒

 0.1. Size:855K  cn hunteck
 hgb105n15sl hgp105n15sl.pdf pdf_icon

HGB105N15S

HGB105N15SL HGP105N15SL , P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching, Logic Level TO-263 8.7 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 9 RDS(on),typ m Enhanced Avalanche Ruggedness 122 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synch... See More ⇒

 5.1. Size:872K  cn hunteck
 hgb105n15m hgk105n15m hgp105n15m.pdf pdf_icon

HGB105N15S

, P-1 HGB105N15M HGK105N15M HGP105N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 8.5 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 8.8 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 120 A ID (Sillicon Limited) Lead Free Application Synch... See More ⇒

 9.1. Size:813K  cn hunteck
 hgb100n12s hgp100n12s.pdf pdf_icon

HGB105N15S

, HGB100N12S HGP100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-263 8.3 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 8.6 RDS(on),typ m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching ... See More ⇒

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Detailed specifications: HGP098N10A, HGB098N10AL, HGP098N10AL, HGB100N12S, HGP100N12S, HGB105N15M, HGK105N15M, HGP105N15M, IRF640, HGP105N15S, HGB105N15SL, HGP105N15SL, HGB110N10SL, HGP110N10SL, HGB110N20S, HGK110N20S, HGP110N20S

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