Справочник MOSFET. HGB105N15S

 

HGB105N15S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HGB105N15S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 273 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 104 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 330 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0107 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для HGB105N15S

   - подбор ⓘ MOSFET транзистора по параметрам

 

HGB105N15S Datasheet (PDF)

 ..1. Size:979K  cn hunteck
hgb105n15s hgp105n15s.pdfpdf_icon

HGB105N15S

,HGB105N15S HGP105N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 9.3RDS(on),typ mW Enhanced Avalanche Ruggedness104 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

 0.1. Size:855K  cn hunteck
hgb105n15sl hgp105n15sl.pdfpdf_icon

HGB105N15S

HGB105N15SL HGP105N15SL, P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 8.7RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 9RDS(on),typ m Enhanced Avalanche Ruggedness122 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synch

 5.1. Size:872K  cn hunteck
hgb105n15m hgk105n15m hgp105n15m.pdfpdf_icon

HGB105N15S

, P-1HGB105N15M HGK105N15MHGP105N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 8.5RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 8.8RDS(on),typ m 100% UIS Tested, 100% Rg Tested120 AID (Sillicon Limited) Lead FreeApplication Synch

 9.1. Size:813K  cn hunteck
hgb100n12s hgp100n12s.pdfpdf_icon

HGB105N15S

,HGB100N12S HGP100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 8.3RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 8.6RDS(on),typ m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching

Другие MOSFET... HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S , HGP100N12S , HGB105N15M , HGK105N15M , HGP105N15M , IRFP460 , HGP105N15S , HGB105N15SL , HGP105N15SL , HGB110N10SL , HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S .

History: 8N65KG-TF3T-T | SVF3N80F | IRFIZ48V | CJP05N60 | MTM13227 | ME35N06-G | YJQ40G10A

 

 
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