HGP115N15S Datasheet and Replacement
Type Designator: HGP115N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 91 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 239 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0112 Ohm
Package: TO-220
HGP115N15S substitution
HGP115N15S Datasheet (PDF)
hgb115n15s hgp115n15s.pdf

HGB115N15S, HGP115N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching TO-263 9.4RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.7RDS(on),typ mW Enhanced Avalanche Ruggedness 91 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swit
hgb110n10sl hgp110n10sl.pdf

HGB110N10SL , HGP110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.7RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V10.7RDS(on),typ m Enhanced Avalanche Ruggedness9.0RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V11RDS(on),typ m Lead Free, Halog
hgb110n20s hgk110n20s hgp110n20s.pdf

,HGB110N20S HGK110N20S P-1HGP110N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth SwitchingTO-263 9.1RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 9.4RDS(on),typ m 100% UIS Tested, 100% Rg Tested132 AID (Sillicon Limited) Lead FreeApplication Synch
Datasheet: HGB105N15SL , HGP105N15SL , HGB110N10SL , HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , P55NF06 , HGB120N10A , HGP120N10A , HGB130N12S , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A .
History: PMV88ENEA
Keywords - HGP115N15S MOSFET datasheet
HGP115N15S cross reference
HGP115N15S equivalent finder
HGP115N15S lookup
HGP115N15S substitution
HGP115N15S replacement
History: PMV88ENEA



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