HGP115N15S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP115N15S
Marking Code: GP115N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 214 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 91 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 42 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 239 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0112 Ohm
Package: TO-220
HGP115N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP115N15S Datasheet (PDF)
hgb115n15s hgp115n15s.pdf
HGB115N15S, HGP115N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching TO-263 9.4RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.7RDS(on),typ mW Enhanced Avalanche Ruggedness 91 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swit
hgb110n10sl hgp110n10sl.pdf
HGB110N10SL , HGP110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.7RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V10.7RDS(on),typ m Enhanced Avalanche Ruggedness9.0RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V11RDS(on),typ m Lead Free, Halog
hgb110n20s hgk110n20s hgp110n20s.pdf
,HGB110N20S HGK110N20S P-1HGP110N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth SwitchingTO-263 9.1RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 9.4RDS(on),typ m 100% UIS Tested, 100% Rg Tested132 AID (Sillicon Limited) Lead FreeApplication Synch
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