All MOSFET. HGB130N12S Datasheet

 

HGB130N12S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB130N12S
   Marking Code: GB130N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 74 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
   Package: TO-263

 HGB130N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB130N12S Datasheet (PDF)

 ..1. Size:1047K  cn hunteck
 hgb130n12s hgp130n12s.pdf

HGB130N12S HGB130N12S

,HGB130N12S HGP130N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 10RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 10.3RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

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