All MOSFET. HGB130N12S Datasheet

 

HGB130N12S Datasheet and Replacement


   Type Designator: HGB130N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 74 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
   Package: TO-263
 

 HGB130N12S substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGB130N12S Datasheet (PDF)

 ..1. Size:1047K  cn hunteck
 hgb130n12s hgp130n12s.pdf pdf_icon

HGB130N12S

,HGB130N12S HGP130N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 10RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 10.3RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A , HGP120N10A , IRFB4115 , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL , HGB190N15S .

History: AP9567GH-HF | 6N65KG-TM3-T

Keywords - HGB130N12S MOSFET datasheet

 HGB130N12S cross reference
 HGB130N12S equivalent finder
 HGB130N12S lookup
 HGB130N12S substitution
 HGB130N12S replacement

 

 
Back to Top

 


 
.