HGB130N12S Specs and Replacement
Type Designator: HGB130N12S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 74 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
Package: TO-263
HGB130N12S substitution
- MOSFET ⓘ Cross-Reference Search
HGB130N12S datasheet
hgb130n12s hgp130n12s.pdf
, HGB130N12S HGP130N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-263 10 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 10.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 74 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒
Detailed specifications: HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A , HGP120N10A , P55NF06 , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL , HGB190N15S .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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