HGB130N12S Datasheet and Replacement
Type Designator: HGB130N12S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 74 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
Package: TO-263
HGB130N12S substitution
HGB130N12S Datasheet (PDF)
hgb130n12s hgp130n12s.pdf

,HGB130N12S HGP130N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 10RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 10.3RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
Datasheet: HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A , HGP120N10A , IRFB4115 , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL , HGB190N15S .
History: AP9567GH-HF | 6N65KG-TM3-T
Keywords - HGB130N12S MOSFET datasheet
HGB130N12S cross reference
HGB130N12S equivalent finder
HGB130N12S lookup
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History: AP9567GH-HF | 6N65KG-TM3-T



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