HGB170N10A Datasheet. Specs and Replacement

Type Designator: HGB170N10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 146 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm

Package: TO-263

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HGB170N10A datasheet

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HGB170N10A

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HGB170N10A

, P-1 HGB170N10AL HGP170N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 14 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 22 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 45.3 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒

Detailed specifications: HGB115N15S, HGP115N15S, HGB120N10A, HGP120N10A, HGB130N12S, HGP130N12S, HGB155N15S, HGP155N15S, IRF630, HGP170N10A, HGB170N10AL, HGP170N10AL, HGB190N15S, HGP190N15S, HGB195N15S, HGP195N15S, HGB200N10SL

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