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HGB170N10A Spec and Replacement


   Type Designator: HGB170N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO-263

 HGB170N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB170N10A Specs

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HGB170N10A

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HGB170N10A

, P-1 HGB170N10AL HGP170N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 14 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 22 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 45.3 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒

Detailed specifications: HGB115N15S , HGP115N15S , HGB120N10A , HGP120N10A , HGB130N12S , HGP130N12S , HGB155N15S , HGP155N15S , IRF630 , HGP170N10A , HGB170N10AL , HGP170N10AL , HGB190N15S , HGP190N15S , HGB195N15S , HGP195N15S , HGB200N10SL .

History: AP60N04DF

Keywords - HGB170N10A MOSFET specs

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