HGP170N10AL Datasheet and Replacement
Type Designator: HGP170N10AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 147 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0257 Ohm
Package: TO-220
HGP170N10AL substitution
HGP170N10AL Datasheet (PDF)
hgb170n10al hgp170n10al.pdf

, P-1HGB170N10AL HGP170N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level14RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability22RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness45.3 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i
hgb170n10a hgp170n10a.pdf

HGB170N10A , P-1HGP170N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 16.7RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 17RDS(on),typ mW Enhanced Avalanche Ruggedness38.6 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
Datasheet: HGP120N10A , HGB130N12S , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , 8205A , HGB190N15S , HGP190N15S , HGB195N15S , HGP195N15S , HGB200N10SL , HGP200N10SL , HGB210N20S , HGK210N20S .
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