HGP170N10AL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP170N10AL
Marking Code: GP170N10AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 16 nC
Rise Time (tr): 3 nS
Drain-Source Capacitance (Cd): 147 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0257 Ohm
Package: TO-220
HGP170N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP170N10AL Datasheet (PDF)
hgb170n10al hgp170n10al.pdf
, P-1HGB170N10AL HGP170N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level14RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability22RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness45.3 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i
hgb170n10a hgp170n10a.pdf
HGB170N10A , P-1HGP170N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 16.7RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 17RDS(on),typ mW Enhanced Avalanche Ruggedness38.6 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
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