HGB195N15S Datasheet. Specs and Replacement
Type Designator: HGB195N15S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0192 Ohm
Package: TO-263
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HGB195N15S substitution
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HGB195N15S datasheet
hgb195n15s hgp195n15s.pdf
, P-1 HGB195N15S HGP195N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 16.0 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 16.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 59 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒
Detailed specifications: HGB155N15S, HGP155N15S, HGB170N10A, HGP170N10A, HGB170N10AL, HGP170N10AL, HGB190N15S, HGP190N15S, IRF9540N, HGP195N15S, HGB200N10SL, HGP200N10SL, HGB210N20S, HGK210N20S, HGP210N20S, HGB220N25S, HGK220N25S
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