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HGB195N15S Spec and Replacement


   Type Designator: HGB195N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 59 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0192 Ohm
   Package: TO-263

 HGB195N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB195N15S Specs

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HGB195N15S

, P-1 HGB195N15S HGP195N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 16.0 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 16.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 59 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

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HGB195N15S

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Detailed specifications: HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL , HGB190N15S , HGP190N15S , IRF9540N , HGP195N15S , HGB200N10SL , HGP200N10SL , HGB210N20S , HGK210N20S , HGP210N20S , HGB220N25S , HGK220N25S .

History: AGMH603H | AGMH12H05H

Keywords - HGB195N15S MOSFET specs

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