HGP210N20S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP210N20S
Marking Code: GP210N20S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 35 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 230 pF
Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm
Package: TO-220
HGP210N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP210N20S Datasheet (PDF)
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, P-1HGB210N20S HGK210N20SHGP210N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching16RDS(on),typ mW Enhanced Body diode dv/dt capability70 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-263 TO-220 Hard Switching and Hig
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