HGP210N20S Datasheet. Specs and Replacement

Type Designator: HGP210N20S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO-220

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HGP210N20S datasheet

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HGP210N20S

, P-1 HGB210N20S HGK210N20S HGP210N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching 16 RDS(on),typ mW Enhanced Body diode dv/dt capability 70 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-263 TO-220 Hard Switching and Hig... See More ⇒

Detailed specifications: HGB190N15S, HGP190N15S, HGB195N15S, HGP195N15S, HGB200N10SL, HGP200N10SL, HGB210N20S, HGK210N20S, 4435, HGB220N25S, HGK220N25S, HGP220N25S, HGB290N10SL, HGP290N10SL, HGB320N20S, HGK320N20S, HGP320N20S

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