All MOSFET. HGP210N20S Datasheet

 

HGP210N20S Datasheet and Replacement


   Type Designator: HGP210N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO-220
 

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HGP210N20S Datasheet (PDF)

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HGP210N20S

, P-1HGB210N20S HGK210N20SHGP210N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching16RDS(on),typ mW Enhanced Body diode dv/dt capability70 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-263 TO-220 Hard Switching and Hig

Datasheet: HGB190N15S , HGP190N15S , HGB195N15S , HGP195N15S , HGB200N10SL , HGP200N10SL , HGB210N20S , HGK210N20S , 2SK3568 , HGB220N25S , HGK220N25S , HGP220N25S , HGB290N10SL , HGP290N10SL , HGB320N20S , HGK320N20S , HGP320N20S .

History: OSG60R092HF | 7NM70G-TM3-T | DMP1080UCB4 | MTP1406J3 | 2SJ595 | LSGC10R080W3 | 7NM65L-TF1-T

Keywords - HGP210N20S MOSFET datasheet

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