HGB220N25S Spec and Replacement
Type Designator: HGB220N25S
Marking Code: GB220N25S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 429 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 93 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 58 nC
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 348 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0219 Ohm
Package: TO-263
HGB220N25S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB220N25S Specs
hgb220n25s hgk220n25s hgp220n25s.pdf
, HGB220N25S HGK220N25S P-1 HGP220N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching TO-263 16.3 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 15.5 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 16.6 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 93 A ID (Sillicon Limited) Lead Free 180 A ID (Package L... See More ⇒
Detailed specifications: HGP190N15S , HGB195N15S , HGP195N15S , HGB200N10SL , HGP200N10SL , HGB210N20S , HGK210N20S , HGP210N20S , SPP20N60C3 , HGK220N25S , HGP220N25S , HGB290N10SL , HGP290N10SL , HGB320N20S , HGK320N20S , HGP320N20S , HGB390N25S .
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