All MOSFET. HGB220N25S Datasheet

 

HGB220N25S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB220N25S
   Marking Code: GB220N25S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 93 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 348 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0219 Ohm
   Package: TO-263

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HGB220N25S Datasheet (PDF)

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 hgb220n25s hgk220n25s hgp220n25s.pdf

HGB220N25S HGB220N25S

,HGB220N25S HGK220N25S P-1HGP220N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth SwitchingTO-263 16.3RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 15.5RDS(on),typ m Enhanced Avalanche RuggednessTO-220 16.6RDS(on),typ m 100% UIS Tested, 100% Rg Tested93 AID (Sillicon Limited) Lead Free180 AID (Package L

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SQ9945BEY-T1-GE3

 

 
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