HGB220N25S Datasheet. Specs and Replacement

Type Designator: HGB220N25S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 429 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 93 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 348 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0219 Ohm

Package: TO-263

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HGB220N25S datasheet

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HGB220N25S

, HGB220N25S HGK220N25S P-1 HGP220N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching TO-263 16.3 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 15.5 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 16.6 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 93 A ID (Sillicon Limited) Lead Free 180 A ID (Package L... See More ⇒

Detailed specifications: HGP190N15S, HGB195N15S, HGP195N15S, HGB200N10SL, HGP200N10SL, HGB210N20S, HGK210N20S, HGP210N20S, SPP20N60C3, HGK220N25S, HGP220N25S, HGB290N10SL, HGP290N10SL, HGB320N20S, HGK320N20S, HGP320N20S, HGB390N25S

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