HGB220N25S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGB220N25S
Marking Code: GB220N25S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 429 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 93 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 58 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 348 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0219 Ohm
Package: TO-263
HGB220N25S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB220N25S Datasheet (PDF)
..1. Size:886K cn hunteck
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hgb220n25s hgk220n25s hgp220n25s.pdf
,HGB220N25S HGK220N25S P-1HGP220N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth SwitchingTO-263 16.3RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 15.5RDS(on),typ m Enhanced Avalanche RuggednessTO-220 16.6RDS(on),typ m 100% UIS Tested, 100% Rg Tested93 AID (Sillicon Limited) Lead Free180 AID (Package L
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