HGP320N20S Datasheet. Specs and Replacement

Type Designator: HGP320N20S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-220

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HGP320N20S datasheet

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HGP320N20S

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Detailed specifications: HGP210N20S, HGB220N25S, HGK220N25S, HGP220N25S, HGB290N10SL, HGP290N10SL, HGB320N20S, HGK320N20S, IRF1010E, HGB390N25S, HGP390N25S, HGK390N25S, HGB480N15M, HGP480N15M, HGB640N25S, HGK640N25S, HGP640N25S

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