All MOSFET. HGP320N20S Equivalents Search

 

HGP320N20S Spec and Replacement


   Type Designator: HGP320N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 51 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-220

 HGP320N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP320N20S Specs

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HGP320N20S

, HGB320N20S HGP320N20S P-1 HGK320N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Switching TO-263 28 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 28 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 28 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 51 A ID Lead Free Application Synchronous Rectification in SMPS ... See More ⇒

Detailed specifications: HGP210N20S , HGB220N25S , HGK220N25S , HGP220N25S , HGB290N10SL , HGP290N10SL , HGB320N20S , HGK320N20S , IRF1010E , HGB390N25S , HGP390N25S , HGK390N25S , HGB480N15M , HGP480N15M , HGB640N25S , HGK640N25S , HGP640N25S .

Keywords - HGP320N20S MOSFET specs

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