All MOSFET. HGB480N15M Datasheet

 

HGB480N15M MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB480N15M
   Marking Code: GB480N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 28.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO-263

 HGB480N15M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB480N15M Datasheet (PDF)

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 hgb480n15m hgp480n15m.pdf

HGB480N15M HGB480N15M

HGB480N15M , HGP480N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 38RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 41RDS(on),typ m Enhanced Avalanche Ruggedness29 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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