HGB480N15M Datasheet and Replacement
Type Designator: HGB480N15M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 57 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: TO-263
HGB480N15M substitution
HGB480N15M Datasheet (PDF)
hgb480n15m hgp480n15m.pdf

HGB480N15M , HGP480N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 38RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 41RDS(on),typ m Enhanced Avalanche Ruggedness29 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and
Datasheet: HGB290N10SL , HGP290N10SL , HGB320N20S , HGK320N20S , HGP320N20S , HGB390N25S , HGP390N25S , HGK390N25S , IRLB4132 , HGP480N15M , HGB640N25S , HGK640N25S , HGP640N25S , HGD028NE6A , HGD028NE6AL , HGD029NE4SL , HGD032NE4S .
History: CTLM8110-M832D | HSS2306A
Keywords - HGB480N15M MOSFET datasheet
HGB480N15M cross reference
HGB480N15M equivalent finder
HGB480N15M lookup
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History: CTLM8110-M832D | HSS2306A



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