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HGB480N15M Spec and Replacement


   Type Designator: HGB480N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO-263

 HGB480N15M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB480N15M Specs

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HGB480N15M

HGB480N15M , HGP480N15M P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching, Logic Level TO-263 38 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 41 RDS(on),typ m Enhanced Avalanche Ruggedness 29 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and... See More ⇒

Detailed specifications: HGB290N10SL , HGP290N10SL , HGB320N20S , HGK320N20S , HGP320N20S , HGB390N25S , HGP390N25S , HGK390N25S , CS150N03A8 , HGP480N15M , HGB640N25S , HGK640N25S , HGP640N25S , HGD028NE6A , HGD028NE6AL , HGD029NE4SL , HGD032NE4S .

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