HGK640N25S Datasheet. Specs and Replacement
Type Designator: HGK640N25S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 104 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: TO-247
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HGK640N25S substitution
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HGK640N25S datasheet
hgb640n25s hgk640n25s hgp640n25s.pdf
, HGB640N25S HGP640N25S P-1 HGK640N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Switching TO-263 50 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 50 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 50 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 35 A ID Lead Free Application Synchronous Rectification in SMPS ... See More ⇒
Detailed specifications: HGK320N20S, HGP320N20S, HGB390N25S, HGP390N25S, HGK390N25S, HGB480N15M, HGP480N15M, HGB640N25S, STP80NF70, HGP640N25S, HGD028NE6A, HGD028NE6AL, HGD029NE4SL, HGD032NE4S, HGD035N08A, HGD035N08AL, HGD040N06S
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