HGI040N06SL Datasheet. Specs and Replacement
Type Designator: HGI040N06SL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-251
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HGI040N06SL datasheet
hgd040n06sl hgi040n06sl.pdf
HGD040N06SL HGI040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 3.3 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 132 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Applica... See More ⇒
Detailed specifications: HGD028NE6A, HGD028NE6AL, HGD029NE4SL, HGD032NE4S, HGD035N08A, HGD035N08AL, HGD040N06S, HGD040N06SL, 5N60, HGD045NE4SL, HGD046NE6A, HGD046NE6AL, HGD050N10A, HGD053N06S, HGD053N06SL, HGI053N06SL, HGD058N08SL
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
