All MOSFET. HGI040N06SL Datasheet

 

HGI040N06SL Datasheet and Replacement


   Type Designator: HGI040N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-251
 

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HGI040N06SL Datasheet (PDF)

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HGI040N06SL

HGD040N06SL HGI040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature3.3RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability132 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplica

Datasheet: HGD028NE6A , HGD028NE6AL , HGD029NE4SL , HGD032NE4S , HGD035N08A , HGD035N08AL , HGD040N06S , HGD040N06SL , 13N50 , HGD045NE4SL , HGD046NE6A , HGD046NE6AL , HGD050N10A , HGD053N06S , HGD053N06SL , HGI053N06SL , HGD058N08SL .

History: BM3415E | AP3990I-HF | AON6998 | UTT6NP10G-S08-R | SIA537EDJ | NCE60P05R | QM2N7002E3K1

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