All MOSFET. HGD053N06S Datasheet

 

HGD053N06S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGD053N06S
   Marking Code: GD053N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO-252

 HGD053N06S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGD053N06S Datasheet (PDF)

 ..1. Size:908K  cn hunteck
 hgd053n06s.pdf

HGD053N06S HGD053N06S

P-1HGD053N06S60V N-Ch Power MOSFET60 VVDSFeature4.5RDS(on),typ mW Optimized for high speed switching112 AID (Sillicon Limited) Enhanced Body diode dv/dt capability70 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi

 0.1. Size:908K  cn hunteck
 hgd053n06sl hgi053n06sl.pdf

HGD053N06S HGD053N06S

HGD053N06SL , HGI053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness105 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication

 9.1. Size:830K  cn hunteck
 hgd058n08sl.pdf

HGD053N06S HGD053N06S

HGD058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.9RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness110 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead FreeApplication Synchronous Rectification

 9.2. Size:964K  cn hunteck
 hgd059n08al hgi059n08al.pdf

HGD053N06S HGD053N06S

, P-1HGD059N08ALHGI059N08AL80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness88 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i

 9.3. Size:959K  cn hunteck
 hgd059n08a hgi059n08a.pdf

HGD053N06S HGD053N06S

, P-1HGD059N08AHGI059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability89 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circu

 9.4. Size:1109K  cn hunteck
 hgd050n10a.pdf

HGD053N06S HGD053N06S

P-1HGD050N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability4.8RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness115 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsTO-

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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