HGD053N06S - аналоги, параметры транзистора - Справочник транзисторов

HGD053N06S технические параметры

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P-1 HGD053N06S 60V N-Ch Power MOSFET 60 V VDS Feature 4.5 RDS(on),typ mW Optimized for high speed switching 112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 70 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchi

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HGD058N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching,Logic Level 4.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.9 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 110 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free Application Synchronous Rectification

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, P-1 HGD059N08AL HGI059N08AL 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 4.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 88 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i