FDS8896 Specs and Replacement
Type Designator: FDS8896
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 37 nS
Cossⓘ -
Output Capacitance: 490 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: SO-8
- MOSFET ⓘ Cross-Reference Search
FDS8896 datasheet
..1. Size:638K fairchild semi
fds8896.pdf 
April 2007 tm FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0m Features General Description rDS(on) = 6.0m , VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.3m , VGS = 4.5V, ID = 14A either synchronous or conventional switching PWM controllers. It has been optimized for l... See More ⇒
..2. Size:586K onsemi
fds8896.pdf
FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0m Features General Description rDS(on) = 6.0m , VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.3m , VGS = 4.5V, ID = 14A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, l... See More ⇒
9.1. Size:280K fairchild semi
fds8882.pdf
December 2008 FDS8882 N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 m Features General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 A The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o... See More ⇒
9.2. Size:305K fairchild semi
fds8884.pdf
February 2006 FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been opt... See More ⇒
9.3. Size:423K fairchild semi
fds8858cz.pdf
May 2009 FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel 30V, 8.6A, 17.0m P-Channel -30V, -7.3A, 20.5m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 17m at VGS = 10V, ID = 8.6A advanced PowerTrench process that has been especially Max rDS(on)... See More ⇒
9.4. Size:446K fairchild semi
fds8812nz.pdf
November 2008 FDS8812NZ N-Channel PowerTrench MOSFET 30V, 20A, 4.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.0m at VGS = 10V, ID = 20A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection ... See More ⇒
9.5. Size:622K fairchild semi
fds8876.pdf
April 2007 tm FDS8876 N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2m Features General Description rDS(on) = 8.2m , VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m , VGS = 4.5V, ID = 11.4A either synchronous or conventional switching PWM controllers. It has been optimize... See More ⇒
9.6. Size:306K fairchild semi
fds8817nz.pdf
November 2008 FDS8817NZ N-Channel PowerTrench MOSFET 30V, 15A, 7.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7m at VGS = 10V, ID = 15A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 10m at VGS = 4.5V, ID =12.6A been especially tailored to minimize the on-state resistance. HBM ESD protection leve... See More ⇒
9.7. Size:684K fairchild semi
fds8870.pdf
April 2007 tm FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2m Features General Description rDS(on) = 4.2m , VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m , VGS = 4.5V, ID = 17A either synchronous or conventional switching PWM controllers. It has been optimized for l... See More ⇒
9.8. Size:620K fairchild semi
fds8880.pdf
April 2007 tm FDS8880 N-Channel PowerTrench MOSFET 30V, 11.6A, 10m Features General Description rDS(on) = 10m , VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m , VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM controllers. It has been optimized fo... See More ⇒
9.9. Size:285K fairchild semi
fds8840nz.pdf
April 2009 FDS8840NZ N-Channel PowerTrench MOSFET 40 V, 18.6 A, 4.5 m Features General Description Max rDS(on) = 4.5 m at VGS = 10 V, ID = 18.6 A The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 14.9 A package technologies have been combined to offer the lowest ... See More ⇒
9.10. Size:335K fairchild semi
fds8813nz.pdf
November 2008 FDS8813NZ N-Channel PowerTrench MOSFET 30V, 18.5A, 4.5m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.5m at VGS = 10V, ID = 18.5A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 6.0m at VGS = 4.5V, ID =16A been especially tailored to minimize the on-state resistance. HBM ESD protect... See More ⇒
9.11. Size:304K fairchild semi
fds8842nz.pdf
February 2009 FDS8842NZ N-Channel PowerTrench MOSFET 40 V, 14.9 A, 7.0 m Features General Description Max rDS(on) = 7.0 m at VGS = 10 V, ID = 14.9 A The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.6 m at VGS = 4.5 V, ID = 11.6 A package technologies have been combined to offer the lowe... See More ⇒
9.12. Size:652K fairchild semi
fds8878.pdf
December 2008 FDS8878 N-Channel PowerTrench MOSFET 30V, 10.2A, 14m Features General Description rDS(on) = 14m , VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m , VGS = 4.5V, ID = 9.3A either synchronous or conventional switching PWM controllers. It has been optimized for ... See More ⇒
9.13. Size:625K fairchild semi
fds8874.pdf
April 2007 tm FDS8874 N-Channel PowerTrench MOSFET 30V, 16A, 5.5m Features General Description rDS(on) = 5.5m , VGS = 10V, ID = 16A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.0m , VGS = 4.5V, ID = 15A either synchronous or conventional switching PWM controllers. It has been optimized for l... See More ⇒
9.14. Size:317K onsemi
fds8884.pdf
February 2006 FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been opt... See More ⇒
9.15. Size:378K onsemi
fds8817nz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.16. Size:477K onsemi
fds8870.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.17. Size:564K onsemi
fds8880.pdf
FDS8880 N-Channel PowerTrench MOSFET 30V, 11.6A, 10m Features General Description rDS(on) = 10m , VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m , VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge... See More ⇒
9.18. Size:1434K cn vbsemi
fds8812nz.pdf
FDS8812NZ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒
Detailed specifications: FDS8878, SP3901, FDS8880, SP3900, FDS8882, SP2702, FDS8884, SP2700, AO3407, SP2458, FDS89141, SP2112, FDS89161, SP2110, FDS89161LZ, SP2108, FDS8928A
Keywords - FDS8896 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
