FDS8896 - описание и поиск аналогов

April 2007 tm FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0m Features General Description rDS(on) = 6.0m , VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.3m , VGS = 4.5V, ID = 14A either synchronous or conventional switching PWM controllers. It has been optimized for l

FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0m Features General Description rDS(on) = 6.0m , VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.3m , VGS = 4.5V, ID = 14A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, l

December 2008 FDS8882 N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 m Features General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 A The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o

February 2006 FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been opt

May 2009 FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel 30V, 8.6A, 17.0m P-Channel -30V, -7.3A, 20.5m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 17m at VGS = 10V, ID = 8.6A advanced PowerTrench process that has been especially Max rDS(on)

November 2008 FDS8812NZ N-Channel PowerTrench MOSFET 30V, 20A, 4.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.0m at VGS = 10V, ID = 20A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection

April 2007 tm FDS8876 N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2m Features General Description rDS(on) = 8.2m , VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m , VGS = 4.5V, ID = 11.4A either synchronous or conventional switching PWM controllers. It has been optimize

November 2008 FDS8817NZ N-Channel PowerTrench MOSFET 30V, 15A, 7.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7m at VGS = 10V, ID = 15A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 10m at VGS = 4.5V, ID =12.6A been especially tailored to minimize the on-state resistance. HBM ESD protection leve

April 2007 tm FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2m Features General Description rDS(on) = 4.2m , VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m , VGS = 4.5V, ID = 17A either synchronous or conventional switching PWM controllers. It has been optimized for l

April 2007 tm FDS8880 N-Channel PowerTrench MOSFET 30V, 11.6A, 10m Features General Description rDS(on) = 10m , VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m , VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM controllers. It has been optimized fo

April 2009 FDS8840NZ N-Channel PowerTrench MOSFET 40 V, 18.6 A, 4.5 m Features General Description Max rDS(on) = 4.5 m at VGS = 10 V, ID = 18.6 A The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 14.9 A package technologies have been combined to offer the lowest

November 2008 FDS8813NZ N-Channel PowerTrench MOSFET 30V, 18.5A, 4.5m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.5m at VGS = 10V, ID = 18.5A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 6.0m at VGS = 4.5V, ID =16A been especially tailored to minimize the on-state resistance. HBM ESD protect

February 2009 FDS8842NZ N-Channel PowerTrench MOSFET 40 V, 14.9 A, 7.0 m Features General Description Max rDS(on) = 7.0 m at VGS = 10 V, ID = 14.9 A The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.6 m at VGS = 4.5 V, ID = 11.6 A package technologies have been combined to offer the lowe

December 2008 FDS8878 N-Channel PowerTrench MOSFET 30V, 10.2A, 14m Features General Description rDS(on) = 14m , VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m , VGS = 4.5V, ID = 9.3A either synchronous or conventional switching PWM controllers. It has been optimized for

April 2007 tm FDS8874 N-Channel PowerTrench MOSFET 30V, 16A, 5.5m Features General Description rDS(on) = 5.5m , VGS = 10V, ID = 16A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.0m , VGS = 4.5V, ID = 15A either synchronous or conventional switching PWM controllers. It has been optimized for l

February 2006 FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been opt

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS8880 N-Channel PowerTrench MOSFET 30V, 11.6A, 10m Features General Description rDS(on) = 10m , VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m , VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge

FDS8812NZ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch