HGI059N08AL Datasheet. Specs and Replacement

Type Designator: HGI059N08AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TO-251

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HGI059N08AL datasheet

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HGI059N08AL

, P-1 HGD059N08AL HGI059N08AL 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 4.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 88 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒

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HGI059N08AL

, P-1 HGD059N08A HGI059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 89 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circu... See More ⇒

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HGI059N08AL

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 hgi050n10al.pdf pdf_icon

HGI059N08AL

HGI050N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 112 A ID 100% UIS Tested, 100% Rg Tested Lead Free Drain Application Synchronous Rectification in SMPS TO-251 Hard Switching and Hig... See More ⇒

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Detailed specifications: HGD050N10A, HGD053N06S, HGD053N06SL, HGI053N06SL, HGD058N08SL, HGD059N08A, HGI059N08A, HGD059N08AL, P60NF06, HGD077N10SL, HGI077N10SL, HGD080N10A, HGI080N10A, HGD080N10AL, HGI080N10AL, HGD090NE6A, HGI090NE6A

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