HGI077N10SL Datasheet. Specs and Replacement
Type Designator: HGI077N10SL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
Package: TO-251
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HGI077N10SL datasheet
hgd077n10sl hgi077n10sl.pdf
HGD077N10SL , HGI077N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 6.4 RDS(on),typ VGS=10V m Optimized for high speed switching,Logic level 7.8 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 105 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Appli... See More ⇒
Detailed specifications: HGD053N06SL, HGI053N06SL, HGD058N08SL, HGD059N08A, HGI059N08A, HGD059N08AL, HGI059N08AL, HGD077N10SL, AO3400A, HGD080N10A, HGI080N10A, HGD080N10AL, HGI080N10AL, HGD090NE6A, HGI090NE6A, HGD090NE6AL, HGI090NE6AL
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