All MOSFET. HGI077N10SL Datasheet

 

HGI077N10SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGI077N10SL
   Marking Code: GI077N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
   Package: TO-251

 HGI077N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGI077N10SL Datasheet (PDF)

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 hgd077n10sl hgi077n10sl.pdf

HGI077N10SL HGI077N10SL

HGD077N10SL , HGI077N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature6.4RDS(on),typ VGS=10V m Optimized for high speed switching,Logic level7.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability105 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeAppli

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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