HGD080N10A MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD080N10A
Marking Code: GD080N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-252
HGD080N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD080N10A Datasheet (PDF)
hgd080n10a hgi080n10a.pdf
, P-1HGD080N10AHGI080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching6.7RDS(on),typ mW Enhanced Body diode dv/dt capability88 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in
hgd080n10al hgi080n10al.pdf
HGD080N10AL , P-1HGI080N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.1RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness83 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication
hgi080n08sl hgd080n08sl.pdf
HGI080N08SL HGD080N08SL P-1,80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic LevelVGS=10V6.3RDS(on),typ m Enhanced Body diode dv/dt capabilityVGS=4.5V8.7RDS(on),typ m Enhanced Avalanche Ruggedness85 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
