HGD090NE6A Datasheet. Specs and Replacement
Type Designator: HGD090NE6A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 567 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO-252
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HGD090NE6A substitution
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HGD090NE6A datasheet
hgd090ne6a hgi090ne6a.pdf
HGD090NE6A , HGI090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 57 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit... See More ⇒
hgd090ne6al hgi090ne6al.pdf
HGD090NE6AL , HGI090NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 58 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in... See More ⇒
hgd093n12sl.pdf
HGD093N12SL P-1 120V N-Ch Power MOSFET Feature High Speed Power Switching, Logic Level 120 V VDS Enhanced Body diode dv/dt capability 7.5 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.3 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 81 A ID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒
Detailed specifications: HGD059N08AL, HGI059N08AL, HGD077N10SL, HGI077N10SL, HGD080N10A, HGI080N10A, HGD080N10AL, HGI080N10AL, IRFZ48N, HGI090NE6A, HGD090NE6AL, HGI090NE6AL, HGD092NE6AL, HGD093N12SL, HGD095NE4SL, HGI095NE4SL, HGD098N10A
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