HGI090NE6A Datasheet. Specs and Replacement

Type Designator: HGI090NE6A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 567 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO-251

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HGI090NE6A datasheet

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HGI090NE6A

HGD090NE6A , HGI090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 57 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit... See More ⇒

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HGI090NE6A

HGD090NE6AL , HGI090NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 58 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in... See More ⇒

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hgi090n06sl hgd090n06sl.pdf pdf_icon

HGI090NE6A

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hgd095ne4sl hgi095ne4sl.pdf pdf_icon

HGI090NE6A

HGD095NE4SL , HGI095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 56 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application ... See More ⇒

Detailed specifications: HGI059N08AL, HGD077N10SL, HGI077N10SL, HGD080N10A, HGI080N10A, HGD080N10AL, HGI080N10AL, HGD090NE6A, IRFZ46N, HGD090NE6AL, HGI090NE6AL, HGD092NE6AL, HGD093N12SL, HGD095NE4SL, HGI095NE4SL, HGD098N10A, HGI098N10A

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