All MOSFET. HGD092NE6AL Datasheet

 

HGD092NE6AL Datasheet and Replacement


   Type Designator: HGD092NE6AL
   Marking Code: GD092NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 17.5 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 261 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252
 

 HGD092NE6AL substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGD092NE6AL Datasheet (PDF)

 ..1. Size:1133K  cn hunteck
hgd092ne6al.pdf pdf_icon

HGD092NE6AL

HGD092NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic Level 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 52 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 46 A Lead Free, Halogen Free ID (Package Limited)Application Synchrono

 9.1. Size:986K  cn hunteck
hgd090ne6a hgi090ne6a.pdf pdf_icon

HGD092NE6AL

HGD090NE6A , HGI090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness57 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 9.2. Size:901K  cn hunteck
hgd093n12sl.pdf pdf_icon

HGD092NE6AL

HGD093N12SL P-1120V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level120 VVDS Enhanced Body diode dv/dt capability7.5RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness9.3RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested81 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.3. Size:894K  cn hunteck
hgd095ne4sl hgi095ne4sl.pdf pdf_icon

HGD092NE6AL

HGD095NE4SL , HGI095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness56 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication

Datasheet: HGD080N10A , HGI080N10A , HGD080N10AL , HGI080N10AL , HGD090NE6A , HGI090NE6A , HGD090NE6AL , HGI090NE6AL , AON7403 , HGD093N12SL , HGD095NE4SL , HGI095NE4SL , HGD098N10A , HGI098N10A , HGD098N10AL , HGI098N10AL , HGD098N10SL .

History: DH400P06B | SM6018NSU | CHM4955JGP

Keywords - HGD092NE6AL MOSFET datasheet

 HGD092NE6AL cross reference
 HGD092NE6AL equivalent finder
 HGD092NE6AL lookup
 HGD092NE6AL substitution
 HGD092NE6AL replacement

 

 
Back to Top

 


 
.