HGD092NE6AL Datasheet. Specs and Replacement

Type Designator: HGD092NE6AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 261 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-252

  📄📄 Copy 

HGD092NE6AL substitution

- MOSFET ⓘ Cross-Reference Search

 

HGD092NE6AL datasheet

 ..1. Size:1133K  cn hunteck
hgd092ne6al.pdf pdf_icon

HGD092NE6AL

HGD092NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic Level 7.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 52 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 46 A Lead Free, Halogen Free ID (Package Limited) Application Synchrono... See More ⇒

 9.1. Size:986K  cn hunteck
hgd090ne6a hgi090ne6a.pdf pdf_icon

HGD092NE6AL

HGD090NE6A , HGI090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 57 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit... See More ⇒

 9.2. Size:901K  cn hunteck
hgd093n12sl.pdf pdf_icon

HGD092NE6AL

HGD093N12SL P-1 120V N-Ch Power MOSFET Feature High Speed Power Switching, Logic Level 120 V VDS Enhanced Body diode dv/dt capability 7.5 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.3 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 81 A ID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 9.3. Size:894K  cn hunteck
hgd095ne4sl hgi095ne4sl.pdf pdf_icon

HGD092NE6AL

HGD095NE4SL , HGI095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 56 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application ... See More ⇒

Detailed specifications: HGD080N10A, HGI080N10A, HGD080N10AL, HGI080N10AL, HGD090NE6A, HGI090NE6A, HGD090NE6AL, HGI090NE6AL, IRF9640, HGD093N12SL, HGD095NE4SL, HGI095NE4SL, HGD098N10A, HGI098N10A, HGD098N10AL, HGI098N10AL, HGD098N10SL

Keywords - HGD092NE6AL MOSFET specs

 HGD092NE6AL cross reference

 HGD092NE6AL equivalent finder

 HGD092NE6AL pdf lookup

 HGD092NE6AL substitution

 HGD092NE6AL replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.