All MOSFET. HGD095NE4SL Datasheet

 

HGD095NE4SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGD095NE4SL
   Marking Code: GD095NE4SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-252

 HGD095NE4SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGD095NE4SL Datasheet (PDF)

 ..1. Size:894K  cn hunteck
 hgd095ne4sl hgi095ne4sl.pdf

HGD095NE4SL HGD095NE4SL

HGD095NE4SL , HGI095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness56 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication

 9.1. Size:986K  cn hunteck
 hgd090ne6a hgi090ne6a.pdf

HGD095NE4SL HGD095NE4SL

HGD090NE6A , HGI090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness57 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 9.2. Size:901K  cn hunteck
 hgd093n12sl.pdf

HGD095NE4SL HGD095NE4SL

HGD093N12SL P-1120V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level120 VVDS Enhanced Body diode dv/dt capability7.5RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness9.3RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested81 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.3. Size:962K  cn hunteck
 hgd098n10al hgi098n10al.pdf

HGD095NE4SL HGD095NE4SL

, P-1HGD098N10ALHGI098N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness65.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectificati

 9.4. Size:1133K  cn hunteck
 hgd092ne6al.pdf

HGD095NE4SL HGD095NE4SL

HGD092NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic Level 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 52 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 46 A Lead Free, Halogen Free ID (Package Limited)Application Synchrono

 9.5. Size:967K  cn hunteck
 hgd098n10sl hgi098n10sl.pdf

HGD095NE4SL HGD095NE4SL

HGD098N10SL , P-1HGI098N10SL100V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level100 VVDS Enhanced Body diode dv/dt capability8.3RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness10.8RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested67 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Synchronous Rectification

 9.6. Size:1141K  cn hunteck
 hgd090ne6al hgi090ne6al.pdf

HGD095NE4SL HGD095NE4SL

HGD090NE6AL , HGI090NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness58 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

 9.7. Size:961K  cn hunteck
 hgd098n10a hgi098n10a.pdf

HGD095NE4SL HGD095NE4SL

, P-1HGD098N10AHGI098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching8.8RDS(on),typ mW Enhanced Body diode dv/dt capability67 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Cir

 9.8. Size:908K  cn hunteck
 hgi090n06sl hgd090n06sl.pdf

HGD095NE4SL HGD095NE4SL

HGI090N06SL HGD090N06SL, P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness61 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested40 AID (Package Limited) Lead Free, Halogen FreeApplication

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SSF18NS60 | MTN4800V8 | GSM2333A | SSF10N80A

 

 
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