HGD095NE4SL Datasheet. Specs and Replacement

Type Designator: HGD095NE4SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 309 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO-252

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HGD095NE4SL datasheet

 ..1. Size:894K  cn hunteck
hgd095ne4sl hgi095ne4sl.pdf pdf_icon

HGD095NE4SL

HGD095NE4SL , HGI095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 56 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application ... See More ⇒

 9.1. Size:986K  cn hunteck
hgd090ne6a hgi090ne6a.pdf pdf_icon

HGD095NE4SL

HGD090NE6A , HGI090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 57 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit... See More ⇒

 9.2. Size:901K  cn hunteck
hgd093n12sl.pdf pdf_icon

HGD095NE4SL

HGD093N12SL P-1 120V N-Ch Power MOSFET Feature High Speed Power Switching, Logic Level 120 V VDS Enhanced Body diode dv/dt capability 7.5 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.3 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 81 A ID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 9.3. Size:962K  cn hunteck
hgd098n10al hgi098n10al.pdf pdf_icon

HGD095NE4SL

, P-1 HGD098N10AL HGI098N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 65.9 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectificati... See More ⇒

Detailed specifications: HGD080N10AL, HGI080N10AL, HGD090NE6A, HGI090NE6A, HGD090NE6AL, HGI090NE6AL, HGD092NE6AL, HGD093N12SL, AON7403, HGI095NE4SL, HGD098N10A, HGI098N10A, HGD098N10AL, HGI098N10AL, HGD098N10SL, HGI098N10SL, HGD100N12S

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