All MOSFET. HGI095NE4SL Datasheet

 

HGI095NE4SL Datasheet and Replacement


   Type Designator: HGI095NE4SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-251
 

 HGI095NE4SL substitution

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HGI095NE4SL Datasheet (PDF)

 ..1. Size:894K  cn hunteck
 hgd095ne4sl hgi095ne4sl.pdf pdf_icon

HGI095NE4SL

HGD095NE4SL , HGI095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness56 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication

 9.1. Size:986K  cn hunteck
 hgd090ne6a hgi090ne6a.pdf pdf_icon

HGI095NE4SL

HGD090NE6A , HGI090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness57 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 9.2. Size:962K  cn hunteck
 hgd098n10al hgi098n10al.pdf pdf_icon

HGI095NE4SL

, P-1HGD098N10ALHGI098N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness65.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectificati

 9.3. Size:967K  cn hunteck
 hgd098n10sl hgi098n10sl.pdf pdf_icon

HGI095NE4SL

HGD098N10SL , P-1HGI098N10SL100V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level100 VVDS Enhanced Body diode dv/dt capability8.3RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness10.8RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested67 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Synchronous Rectification

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Datasheet: HGI080N10AL , HGD090NE6A , HGI090NE6A , HGD090NE6AL , HGI090NE6AL , HGD092NE6AL , HGD093N12SL , HGD095NE4SL , IRF9640 , HGD098N10A , HGI098N10A , HGD098N10AL , HGI098N10AL , HGD098N10SL , HGI098N10SL , HGD100N12S , HGD100N12SL .

History: 2SJ287 | P2803BMG | NTDV20N06 | AP9971GP-HF | 2SK371 | IXTX120N65X2 | NCE65N230I

Keywords - HGI095NE4SL MOSFET datasheet

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