All MOSFET. HGD100N12SL Datasheet

 

HGD100N12SL Datasheet and Replacement


   Type Designator: HGD100N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 242 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252
 

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HGD100N12SL Datasheet (PDF)

 ..1. Size:1160K  cn hunteck
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HGD100N12SL

HGD100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness102 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead FreeApplication Synchronous Rectification in

 4.1. Size:819K  cn hunteck
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HGD100N12SL

HGD100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-252 8.6RDS(on),typ m Enhanced Body diode dv/dt capability102 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed C

Datasheet: HGI095NE4SL , HGD098N10A , HGI098N10A , HGD098N10AL , HGI098N10AL , HGD098N10SL , HGI098N10SL , HGD100N12S , IRFP064N , HGD110N08A , HGI110N08A , HGD110N08AL , HGI110N08AL , HGD110N10SL , HGI110N10SL , HGD120N06SL , HGI120N06SL .

History: APT4080BN | 25N10G-TM3-T

Keywords - HGD100N12SL MOSFET datasheet

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