HGD110N10SL Specs and Replacement
Type Designator: HGD110N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 162 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO-252
HGD110N10SL substitution
HGD110N10SL Specs
hgd110n08al hgi110n08al.pdf
HGD110N08AL , HGI110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 50 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in... See More ⇒
hgd110n08a hgi110n08a.pdf
HGD110N08A , HGI110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 51 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit... See More ⇒
Detailed specifications: HGD098N10SL , HGI098N10SL , HGD100N12S , HGD100N12SL , HGD110N08A , HGI110N08A , HGD110N08AL , HGI110N08AL , IRF840 , HGI110N10SL , HGD120N06SL , HGI120N06SL , HGD155N15S , HGD170N10A , HGI170N10A , HGD170N10AL , HGI170N10AL .
History: IRLR2905
Keywords - HGD110N10SL MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
