HGD120N06SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD120N06SL
Marking Code: GD120N06SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 18.5 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 318 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO-252
HGD120N06SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD120N06SL Datasheet (PDF)
hgd120n06sl hgi120n06sl.pdf
HGD120N06SL , HGI120N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level8.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability12RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness47 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication
hgi120n10al hgd120n10al.pdf
,HGI120N10AL HGD120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness60 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectific
hgi120n10a hgd120n10a.pdf
,HGI120N10A HGD120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching12.0RDS(on),typ mW Enhanced Body diode dv/dt capability59 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in
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