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HGD170N10A Specs and Replacement


   Type Designator: HGD170N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-252
 

 HGD170N10A substitution

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HGD170N10A Specs

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HGD170N10A

HGD170N10A , P-1 HGI170N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 16.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 39 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Cir... See More ⇒

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HGD170N10A

HGD170N10AL , P-1 HGI170N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 15 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 38.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒

Detailed specifications: HGI110N08A , HGD110N08AL , HGI110N08AL , HGD110N10SL , HGI110N10SL , HGD120N06SL , HGI120N06SL , HGD155N15S , IRFP460 , HGI170N10A , HGD170N10AL , HGI170N10AL , HGD190N15SL , HGD195N15S , HGD195N15SL , HGD1K2N20ML , HGI1K2N20ML .

Keywords - HGD170N10A MOSFET specs

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