HGI170N10A Datasheet. Specs and Replacement
Type Designator: HGI170N10A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 39 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 146 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO-251
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HGI170N10A datasheet
hgd170n10a hgi170n10a.pdf
HGD170N10A , P-1 HGI170N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 16.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 39 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Cir... See More ⇒
hgd170n10al hgi170n10al.pdf
HGD170N10AL , P-1 HGI170N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 15 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 38.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒
Detailed specifications: HGD110N08AL, HGI110N08AL, HGD110N10SL, HGI110N10SL, HGD120N06SL, HGI120N06SL, HGD155N15S, HGD170N10A, IRFZ44, HGD170N10AL, HGI170N10AL, HGD190N15SL, HGD195N15S, HGD195N15SL, HGD1K2N20ML, HGI1K2N20ML, HGD210N12SL
Keywords - HGI170N10A MOSFET specs
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History: HGD170N10AL
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