All MOSFET. HGI170N10A Datasheet

 

HGI170N10A Datasheet and Replacement


   Type Designator: HGI170N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-251
 

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HGI170N10A Datasheet (PDF)

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HGI170N10A

HGD170N10A , P-1HGI170N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching16.2RDS(on),typ mW Enhanced Body diode dv/dt capability39 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Cir

 0.1. Size:958K  cn hunteck
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HGI170N10A

HGD170N10AL , P-1HGI170N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness38.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i

Datasheet: HGD110N08AL , HGI110N08AL , HGD110N10SL , HGI110N10SL , HGD120N06SL , HGI120N06SL , HGD155N15S , HGD170N10A , IRFZ44 , HGD170N10AL , HGI170N10AL , HGD190N15SL , HGD195N15S , HGD195N15SL , HGD1K2N20ML , HGI1K2N20ML , HGD210N12SL .

History: CEB6086 | AP60WN2K3H

Keywords - HGI170N10A MOSFET datasheet

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