HGD170N10AL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD170N10AL
Marking Code: GD170N10AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 39 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 147 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO-252
HGD170N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD170N10AL Datasheet (PDF)
hgd170n10al hgi170n10al.pdf
HGD170N10AL , P-1HGI170N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness38.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i
hgd170n10a hgi170n10a.pdf
HGD170N10A , P-1HGI170N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching16.2RDS(on),typ mW Enhanced Body diode dv/dt capability39 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Cir
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