HGD170N10AL Datasheet. Specs and Replacement

Type Designator: HGD170N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 147 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO-252

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HGD170N10AL datasheet

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HGD170N10AL

HGD170N10AL , P-1 HGI170N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 15 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 38.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒

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HGD170N10AL

HGD170N10A , P-1 HGI170N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 16.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 39 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Cir... See More ⇒

Detailed specifications: HGI110N08AL, HGD110N10SL, HGI110N10SL, HGD120N06SL, HGI120N06SL, HGD155N15S, HGD170N10A, HGI170N10A, IRF640, HGI170N10AL, HGD190N15SL, HGD195N15S, HGD195N15SL, HGD1K2N20ML, HGI1K2N20ML, HGD210N12SL, HGD230N10A

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