HGD1K2N20ML Datasheet. Specs and Replacement
Type Designator: HGD1K2N20ML 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-252
HGD1K2N20ML substitution
- MOSFET ⓘ Cross-Reference Search
HGD1K2N20ML datasheet
hgd1k2n20ml hgi1k2n20ml.pdf
HGD1K2N20ML , HGI1K2N20ML P-1 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching, Logic Level 95 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 106 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 18 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchi... See More ⇒
Detailed specifications: HGD155N15S, HGD170N10A, HGI170N10A, HGD170N10AL, HGI170N10AL, HGD190N15SL, HGD195N15S, HGD195N15SL, IRFP260N, HGI1K2N20ML, HGD210N12SL, HGD230N10A, HGD230N10AL, HGI230N10AL, HGD290N10SL, HGI290N10SL, HGD2K4N25ML
Keywords - HGD1K2N20ML MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
