All MOSFET. HGD210N12SL Datasheet

 

HGD210N12SL Datasheet and Replacement


   Type Designator: HGD210N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-252
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HGD210N12SL Datasheet (PDF)

 ..1. Size:902K  cn hunteck
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HGD210N12SL

HGD210N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level20RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness42 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rect

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History: TK2P60D | IRFBG20

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