All MOSFET. HGD210N12SL Datasheet

 

HGD210N12SL Datasheet and Replacement


   Type Designator: HGD210N12SL
   Marking Code: GD210N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 7.6 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-252
 
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HGD210N12SL Datasheet (PDF)

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HGD210N12SL

HGD210N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level20RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness42 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rect

Datasheet: HGI170N10A , HGD170N10AL , HGI170N10AL , HGD190N15SL , HGD195N15S , HGD195N15SL , HGD1K2N20ML , HGI1K2N20ML , AON6414A , HGD230N10A , HGD230N10AL , HGI230N10AL , HGD290N10SL , HGI290N10SL , HGD2K4N25ML , HGI2K4N25ML , HGD320N20S .

History: BLL6H0514LS-130 | 3SK128P

Keywords - HGD210N12SL MOSFET datasheet

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