SP2110 Specs and Replacement
Type Designator: SP2110
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
Package: PDFN5X6
SP2110 substitution
- MOSFET ⓘ Cross-Reference Search
SP2110 datasheet
sp2110.pdf
Green Product SP2110 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 390 @ VGS=10V Suface Mount Package. 100V 1.6A 460 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless ... See More ⇒
sp2112.pdf
Green Product SP2112 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 390 @ VGS=10V Suface Mount Package. 100V 1.2A 430 @ VGS=4.5V D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless ... See More ⇒
Detailed specifications: SP2702, FDS8884, SP2700, FDS8896, SP2458, FDS89141, SP2112, FDS89161, STF13NM60N, FDS89161LZ, SP2108, FDS8928A, SP2107, SP2106, FDS8935, FDS8949, FDS8949F085
Keywords - SP2110 MOSFET specs
SP2110 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IXFE48N50QD3 | FQD4N25 | 2SK2924 | FDS89141 | SRC65R180 | LNSC3400 | 2SK1662
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