All MOSFET. SP2110 Datasheet

 

SP2110 Datasheet and Replacement


   Type Designator: SP2110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: PDFN5X6
 

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SP2110 Datasheet (PDF)

 ..1. Size:104K  samhop
 sp2110.pdf pdf_icon

SP2110

GreenProductSP2110aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.390 @ VGS=10VSuface Mount Package.100V 1.6A460 @ VGS=4.5VD1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless

 9.1. Size:119K  samhop
 sp2112.pdf pdf_icon

SP2110

GreenProductSP2112aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.390 @ VGS=10VSuface Mount Package.100V 1.2A430 @ VGS=4.5V D1 D1 D2 D2DFN 3x3PIN1S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless

Datasheet: SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , FDS89141 , SP2112 , FDS89161 , IRF2807 , FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 , FDS8935 , FDS8949 , FDS8949F085 .

History: IXFH50N50P3 | PHX2N50E

Keywords - SP2110 MOSFET datasheet

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