All MOSFET. HGD290N10SL Datasheet

 

HGD290N10SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGD290N10SL
   Marking Code: GD290N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 31 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 13.5 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO-252

 HGD290N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGD290N10SL Datasheet (PDF)

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 hgd290n10sl hgi290n10sl.pdf

HGD290N10SL HGD290N10SL

HGD290N10SL , HGI290N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level22RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness31 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI2312CDS

 

 
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