HGD290N10SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD290N10SL
Marking Code: GD290N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 31 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13.5 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: TO-252
HGD290N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD290N10SL Datasheet (PDF)
..1. Size:898K cn hunteck
hgd290n10sl hgi290n10sl.pdf
hgd290n10sl hgi290n10sl.pdf
HGD290N10SL , HGI290N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level22RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness31 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification
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