All MOSFET. HGD290N10SL Datasheet

 

HGD290N10SL Datasheet and Replacement


   Type Designator: HGD290N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO-252
 

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HGD290N10SL Datasheet (PDF)

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HGD290N10SL

HGD290N10SL , HGI290N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level22RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness31 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification

Datasheet: HGD195N15S , HGD195N15SL , HGD1K2N20ML , HGI1K2N20ML , HGD210N12SL , HGD230N10A , HGD230N10AL , HGI230N10AL , IRFP250N , HGI290N10SL , HGD2K4N25ML , HGI2K4N25ML , HGD320N20S , HGD480N15M , HGI480N15M , HGD650N15S , HGD650N15SL .

History: NTMFS4C025N | SVG103R0NT | TPCP8203 | 2SK066500L | MTW32N20EG | HGD195N15S | DMP2160UW

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