HGI290N10SL Datasheet. Specs and Replacement
Type Designator: HGI290N10SL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 62 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: TO-251
HGI290N10SL substitution
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HGI290N10SL datasheet
hgd290n10sl hgi290n10sl.pdf
HGD290N10SL , HGI290N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 22 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 25 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 31 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification ... See More ⇒
Detailed specifications: HGD195N15SL, HGD1K2N20ML, HGI1K2N20ML, HGD210N12SL, HGD230N10A, HGD230N10AL, HGI230N10AL, HGD290N10SL, 2N7000, HGD2K4N25ML, HGI2K4N25ML, HGD320N20S, HGD480N15M, HGI480N15M, HGD650N15S, HGD650N15SL, HGD750N15M
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