All MOSFET. HGI2K4N25ML Datasheet

 

HGI2K4N25ML Datasheet and Replacement


   Type Designator: HGI2K4N25ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-251
 

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HGI2K4N25ML Datasheet (PDF)

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HGI2K4N25ML

HGD2K4N25ML , HGI2K4N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level180RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness8.82 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in

Datasheet: HGI1K2N20ML , HGD210N12SL , HGD230N10A , HGD230N10AL , HGI230N10AL , HGD290N10SL , HGI290N10SL , HGD2K4N25ML , 2SK3878 , HGD320N20S , HGD480N15M , HGI480N15M , HGD650N15S , HGD650N15SL , HGD750N15M , HGD750N15ML , HGI750N15ML .

History: TPCP8404 | OSG60R031HZF | CEM4308 | IXTQ30N50P | AOWF11N70 | DACMH80N1200 | FTK10N60P

Keywords - HGI2K4N25ML MOSFET datasheet

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