HGI2K4N25ML MOSFET. Datasheet pdf. Equivalent
Type Designator: HGI2K4N25ML
Marking Code: GI2K4N25ML
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 12 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO-251
HGI2K4N25ML Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGI2K4N25ML Datasheet (PDF)
..1. Size:936K cn hunteck
hgd2k4n25ml hgi2k4n25ml.pdf
hgd2k4n25ml hgi2k4n25ml.pdf
HGD2K4N25ML , HGI2K4N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level180RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness8.82 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in
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