HGD480N15M Datasheet. Specs and Replacement

Type Designator: HGD480N15M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: TO-252

HGD480N15M substitution

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HGD480N15M datasheet

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HGD480N15M

HGD480N15M , HGI480N15M P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching, Logic Level 41 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 28 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain ... See More ⇒

Detailed specifications: HGD230N10A, HGD230N10AL, HGI230N10AL, HGD290N10SL, HGI290N10SL, HGD2K4N25ML, HGI2K4N25ML, HGD320N20S, IRFP250N, HGI480N15M, HGD650N15S, HGD650N15SL, HGD750N15M, HGD750N15ML, HGI750N15ML, HGI050N10AL, HGI080N08SL

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