All MOSFET. HGI480N15M Datasheet

 

HGI480N15M Datasheet and Replacement


   Type Designator: HGI480N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27.9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO-251
 

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HGI480N15M Datasheet (PDF)

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HGI480N15M

HGD480N15M , HGI480N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic Level41RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability28 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain

Datasheet: HGD230N10AL , HGI230N10AL , HGD290N10SL , HGI290N10SL , HGD2K4N25ML , HGI2K4N25ML , HGD320N20S , HGD480N15M , 7N65 , HGD650N15S , HGD650N15SL , HGD750N15M , HGD750N15ML , HGI750N15ML , HGI050N10AL , HGI080N08SL , HGD080N08SL .

History: 2SK681A | OSG65R200FEF

Keywords - HGI480N15M MOSFET datasheet

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