HGI480N15M Datasheet and Replacement
Type Designator: HGI480N15M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 27.9 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 57 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: TO-251
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HGI480N15M Datasheet (PDF)
hgd480n15m hgi480n15m.pdf

HGD480N15M , HGI480N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic Level41RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability28 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain
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History: KI1551DL | RSL020P03TR | RU6881R | 2N5484 | HRU180N10K | BUK101-50GS | WSP4800
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History: KI1551DL | RSL020P03TR | RU6881R | 2N5484 | HRU180N10K | BUK101-50GS | WSP4800



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