All MOSFET. HGI480N15M Datasheet

 

HGI480N15M Datasheet and Replacement


   Type Designator: HGI480N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 27.9 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO-251
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HGI480N15M Datasheet (PDF)

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HGI480N15M

HGD480N15M , HGI480N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic Level41RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability28 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain

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History: KI1551DL | RSL020P03TR | RU6881R | 2N5484 | HRU180N10K | BUK101-50GS | WSP4800

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